摘要
GaAs光导开关可作为紧凑型脉冲功率系统的主要器件,如光导开关在介质壁加速器中的应用。为了研究通态电阻对开关性能的影响,采用平板传输线和同轴电缆作为脉冲形成线,测量了3 mm电极间隙的GaAs光导开关的通态电阻。测量结果表明:电极间隙为3 mm的GaAs光导开关的通态电阻为14.9Ω,光导开关通态电阻的存在将导致开关热损伤,降低脉冲功率系统的电压输出能力,缩短GaAs光导开关的使用寿命。
GaAs Photoconductive Semiconductor Switch（PCSS） can be the main element in compact pulse power system, especially in Dielectric Wall Accelerator（DWA）. The on-resistance of 3 mm gap GaAs PCSS is measured by using planar transmission line and coaxial-cable in order to study the effect of switch on-resistance on the switch performance. The resuh：s show that the measured on-resistance of GaAs switch is 14.9 Ω. The on-resistance of PCSS will cause the thermal damage to the switch, reduce the output capability of pulsed power system, and shorten the life time of GaAs PCSS as well.
出处
《太赫兹科学与电子信息学报》
2013年第6期867-870,共4页
Journal of Terahertz Science and Electronic Information Technology
基金
国家自然科学基金重点资助项目(11035004)
中物院科学技术发展基金资助项目(2013A0402018)
核能技术开发项目
关键词
GAAS光导开关
平板传输线
同轴电缆
通态电阻
热损伤
GaAs Photoconductive Semiconductor Switch
planar transmission line
coaxial-cable
on-resistance
thermal damage
