利用Al_xGa_(1-x)N在Si(111)上生长无裂纹GaN

Crack-free GaN Growth on Si(111) with Step-graded Al_x Ga_(1-x)N Intermediate Layers

利用LP-MOCVD技术在Si(111)衬底上,用不同Al组分的AlGaN做缓冲层,再在缓冲层上生长GaN薄膜,采用XRD技术和原子力显微镜(AFM)分析样品知,样品整体的结晶质量良好。通过分析外延层的拉曼谱得出GaN中存在应力,而且是张应力,通过计算得出,应力为0.23 GPa。

Crack-free GaN epitaxial layer is introduced by Low Pressure-Metal-Organic Chemical Vapor Deposition （LP-MOCVD） with step-graded A1GaN buffer layers on Si（ 111 ） substrate. The sample has a good crystallization quality analyzed by X-ray diffraction （XRD） and Aomic Force Microscope （AFM）. There is tensile stress of 0. 23 GPa in GaN epetaxial layer through Raman spectrum.