期刊文献+

直拉硅单晶热场加热器设计分析 被引量:4

Analysis of hot zone heater for single crystal silicon by Czochralski technique
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摘要 通过对直拉硅单晶热场及加热器的分析,提出了加热器的设计原则和电阻计算方法。并对加热器使用过程中的常见问题进行了分析,并提出了解决方案,提升了加热器的使用寿命,提高了单晶棒的品质。 Through the analysis of CZ silicon single crystal hot zone and heater, principles about heater design and resistance calculation method were put forward. Based the analysis of common problems during the use of heater, solutions were proposed, so the lifetime of the heater was increased, and the quality of single crystal ingot was improved as well.
出处 《炭素技术》 CAS 北大核心 2013年第6期29-32,共4页 Carbon Techniques
关键词 热场 加热器 电阻 直脚加热器 Hot zone heater resistance straight foot heater
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参考文献3

  • 1黄有志;王丽.直拉单晶硅工艺技术[M]{H}北京:化学工业出版社,200943.
  • 2邓树军,高宇,姜舰,戴小林,吴志强,刘冰.热场结构对直拉硅单晶生长能耗影响分析[J].半导体技术,2010,35(12):1183-1185. 被引量:5
  • 3詹国彬;黄建明;朱心怡.一种直拉单晶直脚石墨加热器[P]中国,CN202202017 U,2012.

二级参考文献7

  • 1VORONKOV V V, FALSTER R. Vacancy-type microdefect formation in Czochralski silicon [J]. Journal of Crystal Growth, 1998,194(1) :76- 88.
  • 2VORONKOV V V, FALSTER R. Grown-in microdefects, residual vacancies and oxygen precipitation bands in Czochralski silicon [ J ]. Journal of Crystal Growth, 1999,204 (4) : 462 - 474.
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  • 6KITAMURAA K, FURUKAWAA J, NAKADA Y, et al. Radial distribution of temperature gradients in growing CZ-Si crystals and its application to the prediction of microdefect distribution [ J ]. Journal of Crystal Growth, 2002,242 ( 3 ) : 293 - 301 .
  • 7张克从 张乐漶.晶体生长科学与技术[M].北京:科学出版社,1997..

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