摘要
太赫兹肖特基二极管的建模是设计太赫兹倍频器的首要任务,模型建立准确与否关系着太赫兹倍频器的整体性能。根据GaAs半导体掺杂理论给出二极管n层和n++层的电导率,通过低频仿真并结合经验公式给出R s值。在此基础上对二极管的整体模型进行分离管芯,把二极管的线性区和管芯的非线性区分别放到HFSS软件和ADS软件中进行仿真,将线性区仿真的S参数导入到ADS软件中构成完整的模型。建立好的完整模型进行188 GHz二次倍频仿真验证,输出结果对奇次谐波抑制明显,倍频损耗为5 dB。
The Modeling of GaAs Schottky diode is the most important task in design of THz frequency multiplier,it relates to the performance of the THz frequency multiplier. The n-layer and the n 4＋ -layer conductivity is given based on GaAs semiconductor doping theory. R is given based on low-frequency simulation and empirical formula. The separated anode is done for the whole model of diode, and the linear region and the nonlinear region are simulated respectively in HFSS and ADS. S parameters in HFSS are imported to ADS. The odd harmonics is suppressed and the loss is 5 dB in the frequency multiplier.
出处
《无线电工程》
2014年第1期56-58,共3页
Radio Engineering
