2Ghetti A. Characterization and modeling of the tunneling current in Si-SiO2-Si structures with ultra-thin oxide layer [J]. Microelectronic Engineering, 2001, 59(1-4):127-136.
3Wei J, Mao L, Xu M, et al. Direct tunneling relaxation spectroscopy in ultra-thin gate oxide MOS structures [J]. Solid-State Electronics, 2000, 44(12):2021-2025.
4Khairurrijal, Mizubayashi W, Miyazaki S, et al. Unified analystic model of direct and Fowler-Nordheim tunneling currents through ultrathin gate oxides [J].Appl Phys Lett, 2000, 77(22): 3580-3582.
5Register L F. Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices [J]. Appl Phys Lett, 1999, 74(3):457-459.
6Ando T. Electronic properties of two-dimensional systems [J]. Rev Mod Phys, 1982, 54(2): 438-672.
7Zhao Y J, White M H. Modeling of direct tunneling current through interracial SiO2 and high-k Gate stacks[A]. 2003 Int Semicond Dev Res Syrup [C]. Georgetown, Washington DC, USA. 2003. 468-469.
8Payne M C. Transfer Hamiltonian description of resonant tunneling [J]. J Phys C: Sol Sta Phys, 1986, 19(8):1145-1155.
9Liu X, Kang J, Han R. Direct tunneling model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect [J].Sol Sta Commu, 2003, 125(3-4): 219-223.
10Khairurrijal, Mizubayashi W, Miyazaki S, et al. Analystic model of direct tunnel current through ultrathin gate oxides [J]. J Appl Phys, 2000, 87(6): 3000-3005.
