氧化铟锡透明导电电极的刻蚀研究

Etching of Transparent and Conductive Indium Tin Oxide Films

研制了一种可用于氧化铟锡(ITO)透明电极的刻蚀液,研究了其刻蚀效果,并推断刻蚀机理。选用不同pH值的FeCl3水溶液作为刻蚀功能成分,将PEG10000作为介质,以气相SiO2为触变剂制备刻蚀液,用丝网印刷法对ITO电极进行刻蚀实验,研究了不同刻蚀条件对刻蚀效果及ITO电极体积电阻率的影响。结果表明,pH值为1.67时,于80℃,90 min后ITO薄膜的刻蚀效果最优。通过EDS表征ITO电极元素的变化,用原子力显微镜(AFM)观察电极微观形貌的变化。

A novel etching process of indium tin oxide （ITO） transparent electrode and its etching effect were reported. Etching liquid was made up of FeC13 solution with various pH as functional component, PEG10000 as medium, and gas phase SiO2 as thixotropic agent. ITO etching experi ments were carried out by screen printing method. The influence of different etching conditions on ITO electrode volume resistivity was studied. The result shows that the optimal etching condition is etching at 80 ℃ for 90 min in a solution with pH 1.67. The change of composition and morpholo gy of ITO electrode was characterized by EDS and AFM respectively.