KTiOAsO_4晶体的铁电畴与位错的多种实验方法研究

Research on the Ferroelectric Domain and Dislocations in KTiOAsO_4 Crystal by Multiple Experiment Methods

利用原子力显微镜 ,同步辐射X射线形貌术和化学腐蚀光学显微等方法深入研究了KTiOAsO4 晶体缺陷中的铁电畴和位错。首次用原子力显微镜给出了用两种腐蚀剂腐蚀过的KTA晶体表面的铁电畴和位错蚀坑的照片及定量信息 ,如发现铁电畴的明区要高于暗区 ,且两者的粗糙度明显不同。这为研究各种晶体的生长缺陷开辟了一条新的途径。

The defects such as ferroelectric domain and dislocations in KTiOAsO 4 crystal have been researched with atomic force microscope,synchrotron radiation topography and optical microscope.The pictures and quantitative information on ferroelectric domain and etch pits of dislocations in etched KTA crystal surface have been given first time by atomic force microscope.This opens up a new way to study the growth defects in various crystals.