激光产生的Si等离子体的光谱分析

Spectral analysis of laser-produced Si plasmas

利用双脉冲激光等离子体光谱技术测量了激光烧蚀Si靶产生的极真空紫外波段等离子体光谱,通过标定发现,光谱中的分立谱线主要来自于Si 7+-Si 10+离子的2s-2p跃迁.基于稳态碰撞辐射模型和激发态粒子数布居满足归一化玻尔兹曼分布的假设,计算了不同电荷态Si离子的离子丰度随电子温度的变化关系,并给出了不同等离子体参数条件下的理论模拟光谱.通过与实验光谱的比较,确定了等离子体参数.

The emission spectrum of Si plasma in the extreme ultraviolet region is obtained using the double-pulse laser produced plasma method,it＇s found that the emission lines in the experimental spectrum arise from the 2s-2p transitions of Si7＋-Si10＋ ions.Based on a steady-state collisional-radiative model and the assumption of a normalized Boltzmann distribution among the excited states,the ion abundance of different charge states as a function of plasma electron temperature is calculated and analyzed and the theoretical spectra at the different plasma parameters is simulate.Finally,a spectrum is reproduced,which is in good agreement with experimental results.