摘要
本文对制备时衬底温度不同的辉光放电沉积a-Si样品在超短光脉冲作用下的瞬态光电导进行研究,响应时间与样品缺陷态密度的关系表明a-Si中光生电流衰减的机制是缺陷态对光生载流子的俘获。与化学气相沉积a-Si和进口硅PIN快速光电探测器的瞬态响应实验结果的比较说明,a-Si的瞬态响应稳定性好。
This paper reports the transient photoconductivity in GD a-Si samples deposited at different substrate temperature. The dependence of response time on the defect density suggests that the photocurrent decay is due to the trapping of carriers in defect states. Comparison with the transient response of CVD a-Si and silicon PIN fast photoelectric detector shows that the transient response of a-Si has good stability.
基金
国家自然科学基金
关键词
非晶硅
瞬态光电导
Amorphous Silicon
Transient photoconductivity
