摘要
本文介绍了在超高真空系统中对GaAs晶片进行光辐射清洁。这个实验是在实际研制的象增强器第三代管转移铟封系统上完成的,已具有实用价值。用这套清洁方法所制作的反射式GaAs光阴极积分灵敏度已达750μA/lm。
The surface of p+ - GaAs layer being thermally cleaned by white- light irradia-tion is introduced in this paper. The cleaning method is practically used in our photocathode-transfer vacuum system and the achieved sensitivity of reflective mode GaAs photocathode which is cleaned by the method is up to 750 μA/lm.
