摘要
针对n-on-p型长波Hg1-x Cdx Te红外探测器的暗电流进行建模分析,分析了不同机制对暗电流的影响,仿真分析结果和实际结果能够较好地匹配。得出探测器的工作状态暗电流Idark=9×10-10 A,工作电阻Rr=109Ω,品质因子R0A=20Ωcm2。从仿真分析结果得出,在现有工艺下,Shockley-Read-Hall(SRH)复合和表面漏电是影响暗电流的最主要的非本征因素,其中SRH复合速率为2×1016/s·cm3,当表面态到达1×1012 cm-2,器件会出现严重的表面沟道。
The dark current of n-on-p type LWIR based on Hg1-xCdxTe has been simulated in this paper. Different mechanisms influences dark current are also analyzed. The results of the simulation match well with the experiments. The photodetector has a dark current Idark=9×10^10 A,working resistance Rr=109？, and quality factors R0A=20Ωcm^2. According to the results,with the present technique,Shockley-Read-Hall （SRH） recombination and surface leakage current are the most influential extrinsic factors to the dark current. The recombination rate of SRH can be as high as 2×10^16/sΩcm^3. And the device will have a severe surface channel when the surface states reaches 1×10^12 cm^-2.
出处
《红外技术》
CSCD
北大核心
2014年第1期73-78,共6页
Infrared Technology
