高质量单晶In_2Ge_2O_7纳米带的合成和生长机制探究

Synthesis and Growth Mechanism of High Quality Single Crystal In_2Ge_2O_7 Nanobelts

采用CVD法成功合成了高质量单晶In2Ge2O7纳米带,采用高分辨透射电子显微镜(HRTEM)图像以及X射线衍射(XRD),能谱元素分布图像等对产物进行了表征。结果表明,生长的纳米带长几十微米、厚度50 nm,几乎没有缺陷且In,Ge,O元素分布均匀。此外,基于热力学原理对单晶纳米带的生长机制进行了讨论。

High quality In2Ge2O7 single crystal nanobehs were synthesized by chemical vapor deposition method. The product were characterized by HRTEM, XRD and colored elemental maps. The results indicate that In2Ge2O7 nanobelts have a uniform thickness of 50 nm and the length of several tens of micrometers, there are almost no defects in the atoms matrix. The growth mechanism of the In2Ge2O7 nanobelts was also investigated based on the thermodynamics.