摘要
概述了目前超高精细线路制作的减成法、加成法、半加成法。针对减成法在倒装芯片球栅阵列封装和倒装芯片级封装积层精细线路制造中存在的缺点,重点介绍了超高精细线路半加成及改进的半加成工艺,并从精细线路制造角度分析了曝光、快速蚀刻等关键流程,展望了后续超高精细线路半加成工艺的发展方向。
Conventional subtractive process, additive process and semi-additive process are introduced contrastively. For the unavoidable disadvantages of subtractive process in manufacturing fine lines of Flip-Chip BGA and Flip-Chip CSP, the semi-additive process and a modified versions of the semi-additive process are expound. Key processes of semi-additive process, such as exposure, flash etching, etc. are also analyzed. Future trend of ultra-fine lines development is also covered in the end.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2014年第2期6-9,15,共5页
Electronic Components And Materials
基金
国家科技重大专项课题资助项目(No.2011ZX02709-002)
关键词
IC封装基板
超高精细线路
综述
半加成法
图形转移
曝光
快速蚀刻
IC package substrate
ultra-fine lines
review
semi-additive process
pattern transfer
exposure
flashetching