摘要
介绍了FDTD-PSPICE法进行场-路计算的基本方法和优势,利用该方法仿真计算了强电磁脉冲辐照对CMOS反相器逻辑电平的扰乱作用,发现强电磁脉冲可致使CMOS反相器的逻辑电平发生畸变或发生翻转,并比较了不同频率、不同强度电磁脉冲对CMOS电路的扰乱效果,结果表明,CMOS电路对特定频率的电磁波具有更高的敏感性。
The basic principle and advantages of field-circuit simulation using FDTD-PSPICE Method are introduced. The effects of RF pulse on a CMOS inverter is analyzed, which shows that strong RF pulse will cause distortion and even turnover on logic level of CMOS inverter. The distortions caused by electromagnetic disturbance at different frequencies and different powers are compared, which shows that the circuit is more sensitive to some specific frequencies.
