摘要
The most important interface-related quantities determined by band alignment are the barrier heights for charge trans- port, given by the Fermi level position at the interface. Taking Pb（Zr, Ti）O3 （PZT） as a typical ferroelectric material and applying X-ray photoelectron spectroscopy （XPS）, we briefly review the interface formation and barrier heights at the inter- faces between PZT and electrodes made of various metals or conductive oxides. Polarization dependence of the Schottky barrier height at a ferroelectric/electrode interface is also directly observed using XPS.
The most important interface-related quantities determined by band alignment are the barrier heights for charge trans- port, given by the Fermi level position at the interface. Taking Pb（Zr, Ti）O3 （PZT） as a typical ferroelectric material and applying X-ray photoelectron spectroscopy （XPS）, we briefly review the interface formation and barrier heights at the inter- faces between PZT and electrodes made of various metals or conductive oxides. Polarization dependence of the Schottky barrier height at a ferroelectric/electrode interface is also directly observed using XPS.
基金
Project supported by the German Science Foundation(DFG)within the Collaborative Research Center SFB 595(Electrical Fatigue of Functional Materials)
the National Natural Science Foundation of China(Grant Nos.11274287,11174001,and 11204313)
the National Basic Research Program of China(Grant No.2012CB927402)
