摘要
We systematically studied the thermoelectric properties of MoS2 with doping based on the Boltzmann transport theory and first-principles calculations. We obtained an optimal doping region(around 1019cm 3) for thermoelectric properties along in-plane and cross-plane directions. MoS2in the optimal doping region has a vanishingly small anisotropy of thermopower possibly due to the decoupling of in-plane and cross-plane conduction channels, but big anisotropies of electrical conductivity σ and electronic thermal conductivity κearising from the anisotropic electronic scattering time. The κeis comparable to the lattice counterpart κlin the plane, while κldominates over κeacross the plane. The figure of merit ZT can reach 0.1 at around 700 K with in-plane direction preferred by doping.
We systematically studied the thermoelectric properties of MoS2 with doping based on the Boltzmann transport theory and first-principles calculations. We obtained an optimal doping region(around 1019cm 3) for thermoelectric properties along in-plane and cross-plane directions. MoS2in the optimal doping region has a vanishingly small anisotropy of thermopower possibly due to the decoupling of in-plane and cross-plane conduction channels, but big anisotropies of electrical conductivity σ and electronic thermal conductivity κearising from the anisotropic electronic scattering time. The κeis comparable to the lattice counterpart κlin the plane, while κldominates over κeacross the plane. The figure of merit ZT can reach 0.1 at around 700 K with in-plane direction preferred by doping.
基金
Project supported by the National Natural Science Foundation of China （Grant Nos. 11004201 and 51331006）, the National Basic Research Program of China （Grant No. 2012CB933103）, and the IMR SYNL-Young Merit Scholars and T. S. K~ Research Grant, China.
