摘要
基于横向侧扩散与纵向体扩散结深构成椭圆形冶金结外形这一与工艺实际相符合的假设 ,通过圆柱对称解的归一化 ,提出了平面结击穿电场沿结边分布的解析解。理论结果阐述了不同结深及结边形状对边缘区击穿电压的影响规律 ,说明了表面击穿电压总是小于体内击穿电压的原因。
Based on the elliptic shape assumption of p n junction metallurgical boundary which is a exactly approximation to the practical diffused junction edge,the analytical solutions for the breakdown voltage and electric field distribution along the junction edge have been obtained.Effects of the ratio of the lateral junction depth to the bulk junction depth,normalized junction depth and the location angle along the junction edge on the breakdown voltage and maximum electric field have been discussed.Theory results explain why the surface electric field is always larger than the bulk and the breakdown frequently occurs at the surface.
出处
《半导体情报》
2001年第1期54-57,共4页
Semiconductor Information
关键词
平面结
击穿电压
结深
电场分布
圆柱突变结
planar junction
breakdown voltage
junction depth
field distribution
