腐蚀温度对多晶硅太阳能电池性能的影响

Effects of Etch Temperature on Electrical Properties of Solar Cells

用化学腐蚀方法织构多晶硅片表面,通过调整制程参数获得腐蚀温度分别为12℃、17℃、22℃、29℃的4组样品,利用扫描电子显微镜(SEM)分析化学腐蚀后多晶硅片表面状态,通过反射谱的测试,分析了多晶硅片表面陷光效果,研究腐蚀温度与后续各制程参数的关系。结果表明:随着腐蚀温度的升高,绒面反射率、镀膜膜厚逐渐升高,开路电压、填充因子逐渐增大,短路电流逐渐减小,最终确定了最佳的腐蚀温度。

The polycrystalline silicon wafer was etched by chemical method.Four groups of cells were created with different etch temperatures of 12 ℃,17 ℃,22 ℃,29 ℃.The polycrystalline silicon surface was analyzed by scanning electron microscope （SEM） and the light trapping of the wafer surface by reflection spectrum.It was found that the etch temperature had a notable effect on the subsequent various process parameters.The results indicate that with the etch temperature increased,the antireflective film deposition thickness and the texture reflectance were seen to increase.However,the open-circuit voltage （Uoc）,fill factor （FF） were also increased,and short-circuit current （Isc） was reduced.At last,the best etch temperature was determined.