衬底和退火时间对Al掺杂ZnO薄膜微结构和光学特性的影响

Effect of Substrate and Annealing Time on the Micro-structural and Optical Properties of Al doped ZnO Films

采用射频磁控溅射方法在玻璃和硅衬底上制备出Al掺杂ZnO(AZO)薄膜。利用X射线衍射(XRD)、扫描电子显微镜(SEM)和光致荧光发光(PL)等系统研究了不同Al掺杂量对ZnO薄膜的结晶性能、表面形貌和光学特性等的影响。结果显示,硅衬底和玻璃衬底均出现了(100)和(002)衍射峰,玻璃的(002)衍射峰强于硅。同时随着退火时间的延长,(002)峰强度基本不变,(100)峰的强度逐渐增强,薄膜呈(100)取向生长,表明退火时间可能会引起晶体生长过程中择优取向的改变。退火1.5h样品可以得到最佳的(002)取向。随着退火时间的延长,样品的PL谱中各发光峰强度先增强后减弱随后又增强,且蓝光双峰强度大于绿光峰强度;位于443nm的蓝光发光峰发生了蓝移。

Al doped ZnO （AZO） thin films were deposited on glass and Si substrates using the radio frequency reactive magnetron sputtering technique.The crystallinity,surface images and optical properties of AZO films were systematically investigated by X-ray diffraction （XRD）,scanning electronic microscopy（SEM）,and fluorescence spectrophotometer.The results show that silicon substrate and glass substrate have （100） and （002） diffraction peak,the （002） peak of glass substrate was stronger than silicon.As the annealing time increased,（002） peak intensity was essentially the same,（100） peak intensity gradually increased,the film was （100） oriented growth.Results indicates that the annealing time may cause the crystal growth process preferred orientation changes.1.5 h annealed samples can get the best （002） orientation.The annealing time increases,the PL spectrum of the emission peak intensity of each first increased and then decreased and subsequently enhanced,and the blue green strength was greater than the peak intensity peaks.Blue-ray emission peak at 443 nm blue shift occurred.