介质材料厚度对一维光子晶体禁带的影响

Influence of Dielectric Material Thickness on the Photonic Band-gap of One-dimensional Photonic Crystal

由Si和SiO2两种介质材料构成一维二元光子晶体,研究了介质材料各层厚度对光子禁带宽度和禁带位置的影响.为了更加接近实际情况,数值模拟中考虑了Si和SiO2折射率随波长的变化及材料的吸收.研究结果表明,在单周期厚度不变时,随着Si和SiO2两种高低折射率介质厚度比值的增加,光子禁带变窄且禁带中心向长波方向移动;在两种介质厚度比值确定时,随着两种介质厚度同步递增,光子禁带展宽的同时禁带中心向长波方向移动.因此,在介质材料确定的前提下,可通过改变介质材料各层的厚度获得所需要的光子禁带.

Numerical simulation about th tonic band-gap properties of one-dimension ternative Si and Si02 layers, was performed. ers, the variation of refractive index optical e influence of dielectric layer thickness on the p photonic crystal （1D-PC）, which was made of According to actual properties of Si and SiO2 1 absorption was taken in account. Keeping the sin gle period thickness constant, the photonic band-gap became narrow and shifted to long wave- length region with increase of ratio of Si layer thickness to SiO2 thickness. When the ratio of di- electric 1 will resu results, ness for ay It th er thickness is constant, in wider photonic band-g e desirable photonic band selected dielectric material increasing two dielectric layer thicknesses simultaneously ap and shifting to long wavelength region. Based on above -gap can be obtained by changing the dielectric layer thick-ness for selected dielectric material.