摘要
In this article,we focus on using the multiexciton generation(MEG)effect of quantum dot(QD)to realize quantum cutting of high-energy photons which will give rise to a remarkable increase of total photon number.To avoid the complicated solving of Schro¨dinger equation,we take approximations and develop a method for fast evaluating the quantum efficiency of MEG process.On this basis,we calculate the detailed balance limit of efficiency of Si single-junction solar cell with Si QD-doped glass placed on top of it as a spectral converter layer.It shows that the efficiency will reach 36%which is 6%higher than that without the converter layer.We have also explored the influence of QD radius,QD-doping density,QD,and host material,device working temperature on the efficiency.
In this article, we focus on using the multiex- citon generation （MEG） effect of quantum dot （QD） to realize quantum cutting of high-energy photons which will give rise to a remarkable increase of total photon number. To avoid the complicated solving of Schr6dinger equation, we take approximations and develop a method for fast evaluating the quantum efficiency of MEG process. On this basis, we calculate the detailed balance limit of efficiency of Si single-junction solar cell with Si QD-doped glass placed on top of it as a spectral converter layer. It shows that the efficiency will reach 36 % which is 6 % higher than that without the converter layer. We have also explored the influence of QD radius, QD-doping density, QD, and host material, device working temperature on the efficiency.
基金
supported by the National Natural Science Foundation of China(YG 61177056)
