单晶硅纳米切削的材料去除方式的研究

Study of Chip Removal Way based on the Monocrystilline Silicon Cutting Molecular Dynamics Simulation

当材料切削厚度达到纳米级别,材料去除机理理论尚不成熟,需要通过分子动力学模拟仿真来研究纳米级切削仿真,从而进一步研究材料去除的机理。对于材料的去除方式,主要就不同刀具形状及切削角度来详细讨论了材料的去除方式。在切削前角较小的情况下,材料去除主要以推挤方式去除。由于在纳米级尺度下,随着刀具的移动,刀具前端的单晶硅变为非晶状态,原子晶格变为无序状态,一部分原子向上移动形成切屑,材料去除是不可能类似剪切方式有面的滑移的方式去除的,只能以原子方式去除,故只能以推挤方式进行材料去除。

When cutting thickness to achieve nanoscale, material removal mechanism theory is not yet mature. It needs study the nanoscale cutting simulation by molecular dynamics simulation, so as to further study the mechanism of material removal. It discussed in detail the different shape of cutting tool and rake angle of material removal mode. When rake angle is small, material removal methods is by push way due under the nanoscale dimension. With the movement of the cutting tool, on the front of cutting tool, monocrystalline silicon becomes to amorphous state. It is impossible for the material removal to remove the similar shearing with the slip and only be atomically, so the only way to push for material removal.