WC-Co硬质合金表面不同去钴预处理方法的比较研究

Etching-Co Pretreatment of WC-Co Cemented Carbide Surfaces

用微波等离子体化学气相沉积 (MWPCVD)制备金刚石薄膜涂层之前 ,采用盐酸、硝酸化学腐蚀和氢 氧等离子体对WC Co硬质合金 (YG6 )基体表面进行去钴预处理。扫描电子显微镜形貌观察和X射线衍射谱分析都表明 ,与化学腐蚀方法相比 ,氢 氧等离子体处理具有独特的表面去钴效果 ,沉积金刚石薄膜的喇曼谱分析更证实其对涂层质量的改善 ,且对MW PCVD过程而言有其技术上的一些优越性。

Etching Co pretreatment of WC Co cemented carbide(YG6)substrate surfaces is prerequisite for coating diamond films by microwave plasma chemical vapor deposition.The strengths and weakness of different etching Co pretreatment,including the chemical etching with either hydrochloric acid or with nitric acid and the H 2 O 2 plasma etching were studied with scanning electron spectroscopy,X ray diffraction and Raman spectroscopy.The results show that H 2 O 2 plasma etching results in more effective removing of Co and better diamond coating on the substrate than chemical etching.