探索MOCVD法制备TiO_2薄膜的最佳反应条件

STUDY ON THE OPTIMAL CONDITIONS OF PREPARING TiO2 THIN FILM BY MOCVD

用低压金属有机化合物化学气相沉积 (MOCVD法 )，以四异丙纯钛 (TTIP)为源物质，高纯氮气作为载气，氧气为反应气体，制备出了 TiO2薄膜。分析出了沉积温度、氧气流量等因素对沉积速率的影响。发现在不同反应条件下 TiO2薄膜生长行为受动力学控制或受扩散控制，为制备优质 TiO2薄膜提供了依据。

TiO2 thin films were prepared by MOCVD,titaium isopropoxide was taken as a source matter,nitrogen as s carrier gas for the titanium precursor and oxygen as a reactive gas.The effects of the deposition temperature of TiO2 thin films and the oxygen flow rate on the deposition rate have been ana lysed.Depending on the different parameters,the film growth behavior was kinetically controlled or diffusiblly controlled.The theroretical basis for preparing quality TiO2 thin films was presented.