摘要
本文研究了磁光盘生产中 Ar气压强对直流磁控溅射 Tb Fe Co磁光薄膜均匀性的影响 ,通过调整溅射气压来提高薄膜的厚度均匀性和成分均匀性。在靶 -基片距离为 6 0 0 m m,溅射功率为 6 0 0 W,溅射气压为 0 .6～0 .8Pa的条件下 ,获得了均匀性良好的磁光薄膜 。
The effects of Argon gas pressure on uniformity of TbfeCo magneto optical recording dielectric film were investigated in this paper. The thickness uniformity and composition uniformity of the film were improved by adjusting sputtering gas pressure. The best uniformity characteristics were obtained when target substrate distance, sputtering power and sputtering pressure are 60mm, 600W, 0.6～0.8Pa, respectively. As a result, the optimized sputtering parameters were used for manufacturing MO disks.
出处
《真空》
CAS
北大核心
2000年第6期29-31,共3页
Vacuum
