摘要
该文探讨了60 GHz功率放大器的设计方法,设计并测试了基于0.07μm GaAs工艺的60 GHz毫米波单片功率放大器,该放大器采用共源结构,单级放大,工作电压为1.2 V,工作电流为27 mA,在62.2 GHz时有最大小信号增益4.9 dB,60 GHz时仿真的输出1 dB压缩点功率为12 dBm。
The 60 GHz power amplifier design method is explored and a 60 GHz millimeter-wave monolithic power amplifier is designed and measured with 0.07μm GaAs mHEMT process.The one stage amplifier uses common-source structure .It operates under a 1.2V power supply and 26mA DC bias.A 4.9 dB maximum small signal gain is achieved at 62.2 GHz, and simulated output power at 1 dB compression point is 12 dBm at 60 GHz.
基金
国家自然科学基金资助项目(60906015)
国家重点基础研究发展计划资助项目(2010CB327403)
关键词
毫米波单片集成电路
砷化镓
功率放大器
变异高电子迁移率晶体管
monolithic microwave integrated circuit
gallium arsenide
power amplifier
metamorphic high electron mobility transistor
