Au/PZT/BIT/p-Si结构铁电存储二极管I-V特性

I-V Characteristics of Ferroelectric Memory Diode with Structure of Au/PZT/BIT/p-Si

采用脉冲激光沉积方法 (PL D)制备了 Au/ PZT/ BIT/ p- Si多层结构铁电存储二极管 .对铁电存储二极管的P- E电滞回线、I- V特性曲线分别进行了测试与分析 ,并对其导电行为及基于 I- V特性回滞现象的存储机理进行了讨论 .实验表明 ,所制备的多层铁电薄膜具有较高的剩余极化 (2 7μC/ cm2 )和较低的矫顽场 (4 8k V/ cm ) ,BIT铁电层有助于缓解 PZT与 Si衬底之间的界面反应和互扩散 ,减少界面态 ,与 Au/ PZT/ p- Si结构相比 ,漏电流密度降低近两个数量级 ,I-

A new ferroelectric memory diode that consists of Au/PZT/BIT/ p Si was fabricated by Pulsed Laser Deposition (PLD) technique.Ferroelectric and electrical properties of the ferroelectric diode have been characterized through the measurements of P E and I V hysteresis loop respectively.The conductivity behavior and the memory mechanism have been discussed.The results suggest that the multilayer ferroelectric thin films have a large polarization of 27μC/cm\+2 and a low coercive of 48kV/cm.The growth of the BIT ferroelectric layer weakens the serious interaction and interdiffusion in the PZT/Si interface, decreases the leak current density but enlarges the window of I V hysteresis loop.