不同添加气体对SiC材料SF_6干法刻蚀的影响

Effects of Different Additive Gases on Dry Etching of SiC in SF_6

以六氟化硫 ( SF6)作为刻蚀气体 ,采用不同的添加气体 O2 或 N2 分别进行了 Si C薄膜的等离子体刻蚀 ( PE)工艺研究。实验表明 ,SF6中加入 O2 有助于 Si C材料刻蚀速率的提高 ;但是 ,在相同的刻蚀工艺条件下 ,N2 的加入只起到稀释气体的作用而未参与刻蚀反应 ,Si C刻蚀速率随 N2

Plasma etching(PE) of β-SiC thin films has been performed with different additive gases, such as O 2 and N 2 , in SF 6 reactant. Experimental results show that the etching rates of SiC material increase when O 2 is mixed with reactant gas SF 6, and the etching rates decrease when N 2 is introduced under the identical process conditions, which indicates that the SF 6 is diluted by N 2 and it does not react with SiC during the etching process.