摘要
采用Ar+ 514.5nm的o光和e光测量了Ce:KNSBN晶体两波耦合增益系数随写入光夹角的变化关系曲线 ,得到了Ce:KNSBN晶体的有效电荷密度、有效电光系数和电子 -空穴对抗率等参数.依据光折变理论对增益系数随写入光夹角变化关系实验数据进行了拟合 。
Two-wave coupling gain coefficient for extraordinary and ordinary polarized Ar+514.5 nm laser beam in a Ce:KNSBN photorefractive crystal is measured with respect to the angle between the writing beams. The parameters of the crystal such as electron-hole competition factor, the effective electro-optical coefficient and the effect charge density are obtained. Based on the couple-wave-theory, the variation of the gain coefficient is fitted as a function of the angle between the writing beams and the fitting result agrees with the experimental data.
出处
《河北大学学报(自然科学版)》
CAS
2000年第3期248-251,共4页
Journal of Hebei University(Natural Science Edition)
关键词
光折变
两波耦合
增益系数
晶体
photorefractivity
two-wave coupling
gain coefficient