ISSG及其氮化工艺对栅氧化层性能的改善

Improvement of ISSG and Its Nitridation Process on the Performance of the Thin Gate Oxide

栅氧化层的击穿和漏电是阻碍半导体集成电路发展的重要因素,提高栅氧化层的均匀性可极大地改善栅氧化层的性能。通过引入N2等惰性气体,在高温下对原位水汽氧化法形成的栅氧化层进行实时退火处理。实验结果表明:与没有经过高温N2实时退火处理的栅氧化层相比,经过高温N2实时退火处理的栅氧化层表面均匀度可提高40%左右,栅氧界面态总电荷可减少一个数量级。PMOS器件负偏压不稳定性(NBTI)测试中0.1%样品失效时间(t0.1%)和50%样品失效时间(t50%)分别提高28.6%和40.7%。

Gate oxide breakdown and leakage are important factors which hinder the development of the semiconductor integrated circuit. Improve the uniformity of the gate oxide can greatly improve the performance of the gate oxide. High temperature N2 real-time annealing treatment was performed to the gate oxide at in-situ stream generation （ISSG） oxidation process with introduction the inert gas such as N2. The experimental results show that the uniformity of gate oxide after high temperature N2 real-time annea- ling treatment can be increased by 40%, the total charge of the interface can he decrease an order of magnitude. The PMOS device negative bias temperature instability （NBTI） test shows that the life time of 0. 1% samples failure t0.1%） and 50% samples failure （t50% ） can be increased by 28.6% and 40.7%, respectively.