摘要
研究了Ni/Pt和Ti/Pt金属在n型4H-SiC上的欧姆接触。在1 020℃退火后,Ni/Pt与n型4H-SiC欧姆接触的比接触电阻为2.2×10-6Ω·cm2。Ti/Pt与n型4H-SiC欧姆接触的比接触电阻为5.4×10-6Ω·cm2,退火温度为1 050℃。虽然Ni的功函数比Ti的功函数高,但是Ni比Ti更容易与n型4H-SiC形成欧姆接触。使用能谱分析仪(EDX)分析了Ni/Pt和Ti/Pt金属与4HSiC接触面的元素,观察到C原子相对于Pt原子的原子数分数随退火温度的变化而不同。实验验证了在n型4H-SiC中退火导致的碳空位起施主作用是有利于欧姆接触形成的主要原因。
Ni/Pt and Ti/Pt ohmic contacts on 4H-SiC were investigated. The specific contact resistivities of 2.2×10^-6Ω·cm2 for Ni/Pt and 5.4×10^-6Ω·cm2 for Ti/Pt contacting to n-type 4H-SiC were obtained after annealing at temperature of 1 020℃ and 1050℃ , respectively. Even though the work function of Ni is greater than Ti, Ni is easier than Ti to form ohmic contacts on n-type 4H-SiC. The elements of the surface were analyzed using energy dispersive X-ray detector （EDX）. It was obtained that the atom percentage of C to Pt with the change of annealing temperature was different. The tests show that carbon vacancies, acting as donors for n-type SiC, is the main reason to form ohmic contacts.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第2期128-131,共4页
Semiconductor Technology
