期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

InAs/GaSb Ⅱ型超晶格红外探测器的研究进展 被引量：6

Research progress of InAs / GaSb type Ⅱ super-lattice infrared detector
下载PDF
导出
摘要 InAs/GaSb Ⅱ型超晶格材料理论上性能优于HgCdTe、InSb等红外探测材料,基于成熟的Ⅲ-V族化合物材料与器件工艺,使得Ⅱ型超晶格材料容易满足均匀大面阵、双色或多色集成等红外探测器的要求,因而InAs/GaSb Ⅱ型超晶格材料将逐步替代HgCdTe、InSb等材料成为第三代红外探测器的首选材料。本文阐述了InAs/GaSb超晶格红外探测器的基本原理、以及材料生长和器件结构,并对其研究进展进行了综述性介绍。 InAs/GaSb type II super-lattice is a novel infrared material with the theoretical promise of better perform-ance than MCT and InSb.In view of the maturity of III-V compound materials growth and device technology,it is easyto obtain InAs/GaSb type II super-lattice material for uniform large formats and dual/multiple color infrared detectors.At present,InAs/GaSb type II super-lattice material is regarded as a primary material for the third generation infrareddetectors,which may gradually replace MCT and InSb.The basic theory,the research on materials growth and devicestructure of InAs/GaSb type II super-lattice infrared detector are presented.Research progress of InAs/GaSb type IIsuper-lattice infrared detector is summarized.
作者 宋淑芳 巩锋 周立庆
机构地区 华北光电技术研究所
出处 《激光与红外》 CAS CSCD 北大核心 2014年第2期117-121,共5页 Laser & Infrared
关键词 II类超晶格 红外材料 红外探测器 type II super-lattice infrared material infrared detector
分类号 TN215 [电子电信—物理电子学]
  • 相关文献

参考文献20

  • 1Rogalski A. Infrared Detector[M].New York:CRCPress,2011.
  • 2Smith D L,Mailhiot C. Proposal for strained type II super-lattice infrared detectors[J].{H}Journal of Applied Physics,1987,(06):2545-2548.
  • 3Grein C H,Cruz H,Flatte ME. Theoretical perform-ance of very long wavelength InAs/InGaSb superlatticebased infrared detectors[J].{H}Applied Physics Letters,1994,(20):2530-2532.
  • 4夏建白;朱邦芬.半导体超晶格物理[M]{H}上海:上海科学技术出版社,1995.
  • 5Ting David Z,Hill Cory J,Soibel Alexander. Anti-monide superlattice barrier infrared detectors[J].Infraredsystem and photoelectronic technology IV,2009.74190B1-7410B12.
  • 6Razeghi Manijeh,Nguyen Binh-Minh,Delaunay Pierre-Yves. High operating temperature MWIR photo de-tectors based on type II InAs/GaSb superlattice[J].Quantum sensing and nanophotonic devices VII,2010.76081Q1-7601Q10.
  • 7Walther Martin,Rehm Robert,Schmitz Johannes. I-nAs/GaSb type II superlattice for advanced 2nd and 3rdgeneration detectors[J].Quantum sensing and nanopho-tonic devices VII,2010.76081Z1-7601Z10.
  • 8Nguyen B-Mand Razeghi M. Type !II "M”structure pho-todides:an alternative material design for mid-wave to longwavelength infrared regimes[J].Quantum sensing and nan-ophotonic devices VII,2007.64790S1-6470S10.
  • 9Vargaftman I,Aifer E H,Canedy C L. Graded band gapfor dark-current suppression in long wave infrared W-structured type II superlattice photodiodes[J].{H}Applied Physics Letters,2006,(12):121114-1-121114-3.
  • 10Delaunay Pierre-Yves,Razeghi Manijeh. High perform-ance focal plane array based on type-II InAs/GaSb super-lattice heterostructures[J].Quantum sensing and nano-photonic devices V,2008.69000M1-69000M10.

二级参考文献46

  • 1Xie Q, Van Nostrand J E, Brown J L, et al. Arsenic for antimony exchange on GaSb, its impacts on surface morphology and interface structure[J]. J Appl Phys, 1997, 86 (1): 329-337.
  • 2Razeghi M, Nguyen B M, Hoffman D, et al. Development of material quality and structure design for high performance type II InAs/GaSb superlattice photodiodes and focal plane arrays [C]//SPIE, 2008, 7082: 1-10.
  • 3Walther M, Rehm R, Schmitz J, et al. Antimony-based superlattice for high performace infrared imagers [C]//SPIE, 2008, 6940:69400A-1-69400A8.
  • 4Nguyen B M, Hoffman D, Delaunay P Y, et al. Very high performance LWIR and VIWIR type II InAs/GaSb superlattice photodiodes with M-structure barrier [C]//SPIE, 2009, 7082: 1-12.
  • 5Halasz G A S, Tsu R, Esaki L. A new semiconductor superlattice[J]. Appl Phys Lett, 1977, 30(12): 651-653.
  • 6Smith D L, Maihiot C. Proposal for strained type II superlattice infrared detectors [J]. J Appl Phys, 1987, 62(6): 2545-2548.
  • 7Rogalski A, Antoszewski J, Faraone L. Third-generation infrared photodetector arrays[J]. J Appl Phys, 2009, 105(091101): 1- 44.
  • 8Fuchs F, Herres N, Schrnitz J, et al. InAs/GaSb supedattice characterized by high resolution X-ray diffraction and infrared optical spectroscopy[C]//SPIE, 1996, 2554: 70-77.
  • 9Johnson J L,Samoska L A,Gossard A C,et al.Electrical and optical properties of infrared photodiodes using the InAs/Ga1-xInxSb superlattice in heterojunctions with GaSb.J Appl Phys,1996,80:1116.
  • 10Mohseni H,Wojkowski J,Razeghi M,et al.Uncooled InAsGaSb type-Ⅱ infrared detectors grown on GaAs substrates for the 8 - 12 μm atmospheric window.IEEE J Quantum Electron,1999,35 (7):1041.

共引文献13

同被引文献31

引证文献6

二级引证文献12

激光与红外
2014年 第2期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部