化学水浴法制备CdS薄膜退火工艺的研究

Study on Annealing Treatment of CdS Film Prepared By chemical Bath Deposition

基于化学水浴沉积法以硫脲为硫源,醋酸镉为镉源,氨水作为缓冲剂,制备太阳能电池用半导体薄膜硫化镉(CdS),研究不同的退火温度和是否涂敷CdCl2溶液对CdS薄膜的影响。采用X线衍射仪、电子扫描电镜和紫外/可见光分光光度计研究了不同退火工艺对硫化镉薄膜的结构、形貌及光学特性的影响。实验表明,悬涂CdCl2溶液退火处理可明显改善CdS薄膜的结晶及其光学性质,最佳退火温度为400℃,退火时间为60min。

Based on the chemical bath deposition,semiconductor thin film cadmium sulfide （CdS） for solar cells were prepared with thiourea,acetic acid,aqua ammonia used as the source of CdS and the buffering agent,respectively.The effects of different annealing temperature and coating CdCl2 methanol solution or not on CdS thin film are studied.XRD、SEM and the UV spectrophotometer were used to study the effect of the structure,morphology and optical property of the deposited CdS film.The results show that coating CdCl2 methanol solution annealing treatment can obviously improve crystal quality of the film and its optical property.The best annealing temperature is 400℃.The annealing time is 60min.