1.31μm InGaAsP/InGaAlAs TM偏振高速激光器的优化设计

Design Optimization of 1.31μm InGaAsP/InGaAlAs TM Mode High Speed Lasers

报道了一种以InGaAsP(阱)/InGaAlAs(垒)量子阱为有源区的1.31μmTM偏振高速激光器。以1%张应变的In_(0.49)Ga_(0.51)As_(0.79)P_(0.21)作为阱层,0.5%压应变的InGaAlAs作为垒层,计算了由不同势垒带隙(1.309、1.232、1.177、1.136、1.040 eV)构成的五种多量子阱的发光特性,和由其构成的激光器的器件特性。数值模拟分析表明,采用适度小的势垒带隙,既能将载流子有效限制在有源区,又可以得到载流子在量子阱间的均匀分布,从而改善量子阱的发光特性和激光器的性能参数。该仿真对研制低阈值电流、高特征温度和大调制带宽的InGaAsP/InGaAlAs应变补偿量子阱激光器具有指导意义。

A novel design scheme for high speed [1.31 μm]TM mode lasers based on InGaAsP （well）/InGaAlAs （barrier） strain-compensated multiple quantum wells （MQWs） is proposed. Calculation on luminescence property with five different MQWs （10 nm, 1% tensile-strained In0.49Ga0.51As0.79P0.21 well with 12 nm, 0.5% compress-strained InGaAlAs barriers of Eg =1.309, 1.232, 1.177, 1.136, 1.040 eV, respectively） and simulation on laser diodes based on these MQWs are presented. The results of these studies indicate that moderately small barrier height can not only provide effective confinement for charge carriers, but also make carrier distribution in the MQWs more uniform, thus acquiring advantageous luminescence property and device performance. Our investigation gives guidance to the design and fabrication of [1.31 μm] TM mode lasers of low threshold current, high characteristic temperature, and wide modulation bandwidth.