摘要
采用正交设计实验法研究了配方对Ba(Ti,Zr)O3(BTZ)基电容器陶瓷介电性能的影响 ,得到了影响BTZ基陶瓷介电性能的主次因素 ,各因素水平影响其性能的趋势 对介电常数而言 ,主次影响因素的顺序为Nb2 O5、BaZrO3/BaTiO3、ZnO、CeO2 ;对介质损耗而言 ,主次影响因素的顺序为Nb2 O5、ZnO、CeO2 、BaZrO3/BaTiO3 同时得到了介电常数最大的配方和介质损耗最小的配方 通过正交设计实验得到了综合性能最佳的BTZ基陶瓷 ,它具有高介 (ε)≥1 32 0 0低损耗 (tanδ) <60× 1 0 - 4 和高耐压 (大于 5MV/m) 探讨了各组分对BTZ基陶瓷介电性能影响机理 ,为研制高介、低损耗。
The influence of formula on the dielectric properties of Ba (Ti, Zr)O 3(BTZ) series capacitor ceramics has been investigated by means of orthogonal design experiments. The major、secondary influencing factors and the influencing tendency of various factors' levels for the dielectric properties of BTZ ceramics have been obtained. The order of major and secondary influencing factors is Nb 2O 5、BaZrO 3/BaTiO 3、ZnO、CeO 2 for permittivity values( ε ),and Nb 2O 5、 BaZrO 3/BaTiO 3、 ZnO、CeO 2 for dielectric losses (tan δ ). At the same time, the optimum formulae for ε and for tan δ have been obtained in the experimental conditions. The BTZ ceramics having optimum comprehensive properties has been obtained by means of orthogonal design experiments, which have high ε (≥13200),low tan δ (< 60×10 -4 )and high breakdown voltage(>5MV/m).The influencing mechanism of various components on the dielectric properties of BTZ ceramics is studied,thus providing the basis for preparation of capacitor ceramics with high ε , low tan δ and high breakdown voltage.
出处
《江苏理工大学学报（自然科学版）》
2001年第1期66-70,共5页
Journal of Jiangsu University of Science and Technology(Natural Science)
