First-principles Study of Point Defects in Stoichiometric and Non-stoichiometric Y_4Al_2O_9

By using the first-principles calculation, we studied the mechanisms of point defects in Y4AI209 （YAM）, a promising ternary oxide with excellent optical and thermal properties. It is found that the predominant native defect species is closely dependent on the chemical potentials of each constituent. In the case of O-rich condition, the oxygen interstitial has the very low defect formation energy, followed by the anti-site defects and AI vacancy; in the case of AI-rich condition, the oxygen vacancy yields the lowest defect formation energy, followed by the anti-site defects and AI interstitial. The present result shows that in all the possible chemical potential ranges, anti-site defects have relatively low defect formation energy and might exist in high concentration in YAM. Furthermore, AIy anti-site has relatively lower defect formation energy than the YAt anti- site throughout. The behaviors of defect complexes under non-stoichiometric condition, such as the AI203 or Y203 excess, are also investigated. The results provide helpful guide to optimize the experimental synthesizing of YAM.