摘要
采用脉冲激光淀积 (PLD)法在单晶Si(10 0 )衬底上淀积了ZnO薄膜。XRD、TEM和AFM分析表明 ,淀积的ZnO薄膜具有良好的c轴取向性和表面平整度。通过改变淀积气氛或在纯氧中高温退火 ,ZnO薄膜的电阻率提高到 10 7Ω·cm。这些结果表明 ,用PLD法淀积的ZnO薄膜能够满足声表面波(SAW )器件的需要。
Zinc oxide (ZnO) thin films were deposited on Si (100) by pulsed laser deposition (PLD). XRD, TEM and AFM exhibited the ZnO films were highly c-axis oriented with smooth surface. High resistivity (107 Ω·cm) of the films could be achieved by varying deposition ambient atmosphere or annealing in pure oxygen at high temperature. The results showed that the ZnO films deposited by PLD meet the demands for surface acoustic wave (SAW) devices.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2001年第1期78-79,90,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目
关键词
脉冲激光淀积
压电性
声表面波器件
氧化锌薄膜
Acoustic surface wave devices
Piezoelectricity
Pulsed laser applications
Zinc oxide
