C波段4W功率GaAs MESFET制作技术

Fabricating Technique for C－ band 4－ Watt Power GaAs MESFET's

文章主要介绍了已研制的 C波段 5.2～ 5.8GHz 4W GaAs MESFET功率管制作技术，包括将匹配网络等效电路元件参数换算成集总和分布式元件的方法，及匹配网络工艺制作技术，最后，获得的成品功率管的测量值与模拟计算结果吻合。

The process technique for C－ band 5.2～ 5.8GHz 4W GaAs MESFET power device developed is mainly introduced. In this paper are included the methods of the determining transformation from the elements' parameters of match network equivalent circuit into lumped and distributed elements, and the process technique of the matching networks is also included. Finally, the simulated and calculated data are good agreement with measurement data of power device fabricated.