期刊文献+

磁场对二维量子点两电子系统自旋极化态能级的影响

Influence of Magnetic Field on the Energy of Spin Polarization State of the Two-electron System in Two-dimensional Quantum Dot
下载PDF
导出
摘要 采用少体物理方法,研究了磁场对二维量子点两电子系统自旋极化态能级的影响。以GaAs半导体量子点为例,对体系基态能级E0、第一激发态自旋单态能级E1(A)和自旋三重态能级E1(S)随量子点有效半径l0和磁场B的变化进行了数值计算。结果表明,E0随B的增加而增大,随l0的增加而减小;在磁场中第一激发态自旋单态能级E1(A)分裂为E1+1(A)、E1-1(A)两条,第一激发态自旋三重态能级E1(S)分裂为EMS1+1(S)、EMS1-1(S)(MS=1,0,-1)两组,每组中有三条"精细结构";各能级(组)均随l0的增加而减小,而它们随B的变化情况差异较大,能级E1+1(A)和EMS1+1(S)随B的增加而显著增大,而能级E1-1(A)和EMS1-1(S)随B的变化相对缓慢;各能级(组)的分裂度均与磁场B的一次方成正比。 Influence of magnetic field on the energy of spin polarization state of two-electron system in two-dimensional quantum dot is studied by using the method of few-body physics. As an example, the numerical calculation is performed for GaAs semiconductor quantum dot to show the variations of the ground-state energy E0, spin-singlet energy E1 (A) and spin-triplet energy E1 (S) of first excited state with the effective radius 10 and the magnetic field B. The results of numerical calculation show that E0 increases with increasing B, but decreases with increasing 10 in the magnetic field, the spin-singlet energy El (A) of first excited state splits into two branches as E1+1 (A) and El-1 (A), and the spin-triplet energy El (S) of first excited state splits into two Ms sets as E^Ms1+1 (S) and E^Ms1-1 (S) (where Ms= 1,0,- 1) , with each set consisting of three "fine struc- ture"~ each energy (set) mentioned above decreases with increasing l0, but there are significant
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2014年第1期1-5,共5页 Research & Progress of SSE
基金 河北省自然科学基金资助项目(E2013407119) 河北省高校科学技术研究重点资助项目(ZD20131008)
关键词 量子点 少体物理 电子-电子相互作用 自旋极化态 quantum dot method of few-body physics electron-electron interaction spin po-larization state
  • 相关文献

参考文献15

  • 1Dou X M,Sun B Q, Jiang D S, et al. Electron spin re- laxation in a single InAs quantum dot measured by tunable nuclear spins [J]. Phys Rev B, 2011, 84(3) : 033302-033305.
  • 2Dou X M, Chang X Y, Sun B Q, et al. Electron spin relaxation by nuclei and holes in single InAs quantum dots [J]. Appl Phys Lett, 2009, 95(2): 221903- 221905.
  • 3Gong J, Liang X X, Ban S L. Confined LO-phonon assisted tunneling in a parabolic quantum well with double barriers [J]. J Appl Phys, 2006, 100 (2): 023707-023711.
  • 4Qu Yu, Ban S L. Ternary mixed crystal effect on elec- tron mobility in a strained wurtzite AlN/GaN/AlN quantum well with an InxGa1-x N nanogroove . J Appl Phys, 2011, 110(1): 013722-013728.
  • 5Ha S H, Ban S L, Zhu J. Screened excitons in strained wurtzite AlxGa1-x N/GaN/AlyGa1-y N quantum wells [J]. Phys Status Solidi C, 2011, 8(1) : 34-37.
  • 6Kastner M A. The single-electron transistor [J]. Rev Mod Phys, 1992, 64(3): 849-858.
  • 7Xie W F. Barrier D-quantum dots in magnetic fields [J]. J Phys Condensed Matter, 2000, 12(16): 3849- 3856.
  • 8解文方,陈传誉.量子点电子态的尺寸效应和磁场的影响[J].物理学报,1998,47(1):103-106. 被引量:9
  • 9解文方,陈传誉.磁场中量子点四电子系统的基态性质[J].物理学报,1998,47(3):478-484. 被引量:5
  • 10Yannouleas C, Landman U. Collective and independ- ent-particle motion in two-electron artificial atoms [J]. Phys Rev Lett, 2000, 85(8): 1726-1729.

二级参考文献3

  • 1Ruan W Y,J Math Phys,1996年,37卷,3760页
  • 2Bao C G,Phys Rev B,1996年,53卷,10820页
  • 3Ruan W Y,Phys Rev B,1995年,51卷,7942页

共引文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部