用于多模多频射频前端的单刀八掷SOI天线开关设计

Design of an SP8T Silicon-on-insulator Antenna Switch for Multi-mode Multi-band RF Front-end

提出了一种用于手机多模多频前端的射频单刀八掷（SP8T）天线开关设计，该开关采用绝缘体上硅（SOI）I艺实现。由于衬底电阻率高达1000Ω·am，且在器件选取和电路结构设计方面采用了多种技巧，实测结果表明，该款开关的插入损耗在0～2．4GHz频段内均小于ldB，隔离度平均大于35dB，功率处理能力也达到了36dBm以上，完全满足设计需求。

This paper presented a new single-pole-eight-throw（SP8T） antenna switch for multi-mode multi-band cellular RF-front end by adopting the silicon-on-insulator process. With 1 000 Ω. cm resistivity substrate, and careful evaluated device as well as skilfully designed cir- cuit, the tested results of the fabricated switch are 〈1dB insertion loss in 0~2.4 GHz band, 35 dB isolation, and over 36dBm power handling ability, which all meet the design expectations.