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温度对悬臂梁静电驱动RF-MEMS开关性能的影响

Temperature Influence on the Performances of Electrostatic Cantilever RF-MEMS Switch
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摘要 介绍了温度对悬臂梁式RF-MEMS开关的影响。以南京电子器件研究所研制的悬臂梁式RF-MEMS开关为实验样品,常温下(25°C)先测定样品的驱动电压和射频特性,再将样品置于温度恒定的烘箱中热烘1h,取出后在常温条件下测定其机械形貌及电学性能。烘箱的温度从50°C变化到200°C,步进50°C。针对每个温度做一轮实验,最后将所得数据进行对比。实验结果表明,温度对于开关的射频性能影响极其微弱,但驱动电压对于温度却有较强的依赖性。分析认为,当温度变化时,悬臂梁结构的翘曲是影响驱动电压变化的主要因素。最后提出了几种可以提高结构温度稳定性的方法。 This article focuses on the relationship between the temperature and the perform- ance of the cantilever RF-MEMS switches. Their performances are first measured at room tem- perature (25 °C) and measured again after they are stored in an oven at a certain temperature T (every other 50 °C from 50 °C to 200 °C) for about one hour followed by cooling down to room temperature outside of the oven. The experiment results indicate that the influence of tempera- ture on the RF performance of MEMS switch is negligible, but its influence on the actuation volt- age is susceptible. The distortion of the cantilever is thought to be the main reason for the varia- tion of the actuation voltage. Some methods are proposed at the end of the article to improve the stability of the RF-MEMS switches over temperature.
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2014年第1期69-74,共6页 Research & Progress of SSE
关键词 射频-微电子机械系统开关 温度 悬臂梁 驱动电压 RF-MEMS switches temperature cantilever actuation voltage
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参考文献7

  • 1Mulloni V, Solazzi F, Ficorella F, et al. Influence of temperature on the actuation voltage of RF-MEMS switches. Microelectronics Reliability, 2013, 53 (5) :706-711.
  • 2Lai C H,Wong W S H. Temperature dependent actua tion voltage for longer MEMS switch lifetime [ C]. Proceedings of the 2nd Asia Symposium on Quality E lectronic Design, 2010:43-48.
  • 3Chirag D Patel, Gabriel M Rebeiz. RF-MEMS metal contact switches with raN-contact and restoring forces and low process sensitivity. IEEE Transactions on Microwave Theory and Techniques, 2011, 59 (5): 1230-1237.
  • 4Chirag D Patel, Gabriel M Rebeiz. A high-reliability high-linearity high power RF MEMS metal contact switch for DC-40-GHz applications. IEEE Transac tions on Microwave Theory and Techniques, 2012,60 (10):3096-3112.
  • 5Thomas C Hodge, Sue Ann Bidstrup Allen, Paul A Kohl. Stresses in thin film metallization[J]. IEEE Transactions on Components, Packaging, and Manu- facturing Technology, 1997, 20(2) :241-250.
  • 6Reines I C, Rebeiz G M. A robust high power-han dling (>10 W) RF MEMS switched capacitor[C]. Proceedings of the IEEE International Conference on Micro Electro Mechanical System, 2011 : 764-767.
  • 7Reshed Mahameed, Gabriel M Rebeiz. RF MEMS ca- pacitive switches for wide temperature range applica- tions using a standard thin film process . IEEE Transcations on Microwave Theory and Techniques, 2011, 59(7):1746-1752.

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