一种具有0.5dB噪声系数的450～470MHz单片集成LNA

A Monolithic 450～470MHz LNA of 0.5dB Noise Figure

基于0．5μm赝配高电子迁移率晶体管（pHEMT）工艺，设计制造了一款工作于450-470MHz频段的单片集成低噪声放大器（LNA），该LNA采用阻容负反馈的方式实现输入阻抗匹配，减小了无源元件占有的芯片面积，达到了单片集成的目的，同时降低了使用成本,测试结果表明，该单片集成LNA具有40dB左右的增益和约0．5dB的噪声系数，其低噪声性能十分优秀，这得益于pHEMT管不引入高损耗的片上电感所带来的好处及其本身优异的低噪声特性．

A 450-470 MHz monolithic LNA based on 0.5 μm pHEMT was developed. The developed LNA employs resistive-shunt feedback configuration for input impedance matching, which reduces the chip size of passive elements and make it possible for on-chip fabrication. The measurement results show that the monolithic LNA has a 40 dB gain and a 0.5 dB noise figure, and the remarkable noise performance is attributed to the benefits of the absence of high-loss on-chip inductors and the low noise performance of pHEMT transistors.