摘要
氧化锌是一种宽禁带半导体,在太阳能、光电显示等方面有广泛的应用。制约其应用的是p型氧化锌很难得到,其中一个原因在于本征氧化锌n型导电的原因不明确。本文综述了氧化锌n型导电的机理,重点分析了本征缺陷和非故意掺杂氢对氧化锌n型导电的影响。
ZnO is a wide gap band semiconductor, which has been used widely in solar energy, optical display and many other aspects. It is difficult to make p type ZnO that limits the application of ZnO. One reason is that we do not know the origin of n-type ZnO clearly. This article reviews two main reasons due to the n-type conductivity. One is the native defect, the other is unintentionally incorporated.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2014年第1期107-111,共5页
Bulletin of the Chinese Ceramic Society
基金
国家自然科学基金(11374204)
上海市科委重点项目(12JC1404400
11160500700)
关键词
氧化锌
n型导电
本征缺陷
非故意掺杂
ZnO
n-type conductivity
native defect
unintentionally incorporated
