半导体金刚石薄膜的制备及性质研究

The Preparation and Investigation of Properties of Semiconductor Diamond Films

本文报导了利用灯丝热解CVD方法在单晶硅衬底表面气相合成硼掺杂p-型金刚石薄膜的方法和结果,并对其晶体结构、半导体性质及发光特性进行了较为系统的研究。

The methods and results about synthesis of B doped P-type diamond films on the single crystal silicon substrates by CVD method with the pyrolytic filament were reported. The systemic investigation of their structure, properties of semiconductor and luminosity was made.