摘要
A dynamic range extension scheme applied to a time delay integration （TDI） CMOS image sensor （CIS） is presented. Two types of pixels with higher and lower conversion gain are adopted in the pixel array, which are suitable for capturing images in low and high illumination respectively. By fusing the two kinds of pixels＇ output signals in the process of TDI accumulation, a high dynamic range image can be achieved. Compared with the traditional multiple integration technique, no photoelectrons generated during the exposure time are discarded by the reset operation, and thus a higher level of signal-to-noise ratio （SNR） can be retained. A prototype chip with an 8 × 8 pixel array is implemented in a 0.18 μm CIS process, and the pixel size is 15 × 15 μm2. Test results show that a 76 dB dynamic range can be achieved in 8-stage TDI mode, when the SNR boost can reach 7.26 dB at 90.8 lux.
A dynamic range extension scheme applied to a time delay integration （TDI） CMOS image sensor （CIS） is presented. Two types of pixels with higher and lower conversion gain are adopted in the pixel array, which are suitable for capturing images in low and high illumination respectively. By fusing the two kinds of pixels＇ output signals in the process of TDI accumulation, a high dynamic range image can be achieved. Compared with the traditional multiple integration technique, no photoelectrons generated during the exposure time are discarded by the reset operation, and thus a higher level of signal-to-noise ratio （SNR） can be retained. A prototype chip with an 8 × 8 pixel array is implemented in a 0.18 μm CIS process, and the pixel size is 15 × 15 μm2. Test results show that a 76 dB dynamic range can be achieved in 8-stage TDI mode, when the SNR boost can reach 7.26 dB at 90.8 lux.
基金
Project supported by the National Natural Science Foundation of China(Nos.61036004,61076024)
