纳米SiO_2掺杂的In2O_3厚膜气敏传感器稳定性研究

Research on the stability of In_2O_3 thick-film gas sensors with nano-scale dopants of SiO_2

采用丝网印刷技术,制备了纳米SiO2掺杂的In2O3厚膜气敏传感器,并通过加速寿命试验对乙醇气氛下传感器的稳定性进行探究。通过长期测试发现纳米SiO2的掺入明显地提高了In2O3气敏传感器的稳定性。此外,当SiO2的掺杂浓度控制在5wt%左右时,In2O3气敏传感器的气敏性能也有了很大的提高。结合实验数据,对SiO2提高In2O3气敏传感器稳定性与敏感性的微观机理做了深入分析。

Nano-scale SiO2-doped In2O3 thick-film gas sensors are prepared by using screen printing technique. The stability of these gas sensors in ethanol atmosphere is tested through accelerated life tests. The results show that nano-scale SiO2 dopants could improve the stability of In2O3 gas sensors significantly. In addition, when the concentration of nano-scale SiO2 dopants is controlled less than 5wt%, the sensitivity of the In2O3 gas sensor is improved greatly. Combining with the experiment data, the reasons why nano-scale SiO2 dopants can improve the stability and sensitivity of In2O3 gas sensors are discussed deeply.