P型GaN和AlGaN外延材料的制备

Growth of P-type GaN and AlGaN Epitaxial Films

研究了MOVPE方法外延P型GaN和Al0 13Ga0 87N的生长工艺 ,包括掺杂剂量和热退火条件 ,对材料电学性质的影响。得到了性能优良的P型材料 ,并研制了InGaN/AlGaN双异质结蓝光发光二极管。

The growth techniques of P type GaN and Al 0 13 Ga 0 87 N by MOVPE, including the doping dosage and thermal anneal, and their influences on the electrical property of the materials are studied. High quality P type GaN and Al 0 13 Ga 0 87 N epitaxial films are obtained and InGaN/AlGaN double heterojunction blue light emitting diode is fabricated.