摘要
本文利用OMA-Ⅲ系统测量了脉冲TEA CO_2激光诱发的SiH_4等离子体发光谱内H巴耳末系的H_α、H_β和H_γ线的线型及线宽。通过理论及实验分析,认为这些谱线的主要加宽机制为Stark加宽。由实验线型和理论线型的拟合得到等离子体的电子温度T≈40000K和电子密度N≈10^(17)cm^(-3)。
The profiles of H balmer H_α, H_β and H_γ lines in a pulsed TEA CO_2 laser induced silane plasma were studied with an OMA system(OMAⅢ).The results of experimental and theoretical analysis of the line shapes and widths suggested that the dominant broadening mechanism of the lines is Stark broadening. From fitting the measured H line to the theoretical results we got two parameters of the plasma i.e. electron temperreature T ≈40000K and electron desity N≈10^(17)cm^(-3).
出处
《光电子.激光》
EI
CAS
CSCD
北大核心
1991年第3期150-151,共2页
Journal of Optoelectronics·Laser
基金
国家自然科学基金