离子注入对SiO_2表面非晶碳薄膜的化学状态及摩擦学性能的影响

Effect of Ion Implantation on the Interface Chemical States and Tribological Behavior of Amorphous Carbon Film on SiO_2 Substrate

采用真空蒸镀法在 Si O2 表面制备非晶态碳纳米薄膜 ,考察了碳离子注入对非晶态碳薄膜与基体结合强度及摩擦学性能的影响 ,并采用 X射线光电子能谱表征了碳薄膜 /基体的界面化学状态 .研究结果表明 :非晶态碳薄膜经碳离子注入处理后 ,碳薄膜与基体的结合强度及其耐磨寿命均明显提高 ;当碳离子注入剂量达到 1× 10 1 6 C+ /cm2 时 ,碳薄膜与基体的结合强度增加 ,但碳薄膜耐磨寿命的提高幅度有限 ;当注入剂量达到并超过 5× 10 1 6 C+ /cm2 后 ,碳离子注入所引起的碰撞混合和化学混合作用直接导致碳薄膜与 Si O2 基体界面处的原子扩散以及 Si- C键的形成 ,从而大幅提高碳薄膜与基体的结合强度及其耐磨寿命 .

The effect of ion mixing by C+ implantation on the tribological behavior and adhesion strength of amorphous carbon film on SiO2 substrate was investigated by means of ball-on-disc friction and wear testing and X-ray photoelectron spectroscopic analysis of the film/substrate interface. The results show that the anti-wear life and adhesion strength of amorphous carbon films on SiO2 substrate are significantly increased by C+ ion implantation, especially at a dose of C+ ion 1×1016C+ cm-2. The improvement in the adhesion strength and antiwear life of the amorphous carbon film on SiO2 substrate is attributed to the atomic diffusion and chemical changes at the film/substrate interface in the presence of C+ ion implantation. Especially, Si-C of high mechanical strength and good wear-resistance is formed at the interface C+ ion implantation of the amorphous carbon film at relatively high doses, which contributes to resist wear after partial destruction of the amorphous carbon film at extended sliding duration.