金属诱导法低温多晶硅薄膜的制备与研究

Preparation and Characterization of Poly- Crystalline Si Films Obtained by Metal Induced Crystallization at Low Temperature

利用金属诱导晶化 ( Metal Induced Crystallization,MIC)的方法研究了 a- Si/ Ni的低温晶化 ,MIC晶化温度能降低到 44 0℃ .采用 XRD、Raman、SEM、XPS等分析手段研究了 Ni- MIC多晶硅薄膜的特性 ,对薄膜结构和组成进行了分析 。

Amorphous silicon ( a- Si) films were deposited by PECVD and then crystallized by Metal Induced Crystallization ( MIC) at various temperatures.The crystallization temperature was reduced to 44 0℃ .The Ni- MIC p- Si thin films were char- acterized by using XRD,Raman,SEM and XPS.The depth profiles of structure and chemical composing of the films were ana- lyzed,and the crystallization m echanism was discussed.